MRF5015

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. Guaranteed Performance at 512 MHz, 12.5 Volts Output Power — 15 Watts Power Gain — 10 dB Min Efficiency — 50% Min Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF5015 15 W, 512 MHz, 12.5 VOLTS N–CHANNEL BROADBAND RF POWER FET CASE 319–07, STYLE 3 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Value 36 36 ± 20 6 50 0.29 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 3.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = ...