N-Channel Enhancement-Mode MOSFET
Semiconductor
h S aswitching application. • High speed t a application. • Analog switch D . Features w •w 2.5V Gate dri...
Description
Semiconductor
h S aswitching application. High speed t a application. Analog switch D . Features w w 2.5V Gate drive. Low threshold voltage : Vth = 0.5~1.5V. w Two STK1828 Chips in SOT-563F Package.
Description Ordering Information
Type NO. SUF621EF Marking H
t e e
4U
.
m o c
SUF621EF
N-Channel Enhancement-Mode MOSFET
Package Code
Outline Dimensions
w
w
w
.D
t a
S a
e h
t e
U 4
Q2
SOT-563F
.c
m o
unit :
mm
3
2
1
Q1
4
5
6
PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1
KST-J017-000
w
w
w
.D
at
h S a
t e e
4U
.
m o c
1
SUF621EF
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range
(Q1,Q2 Common)
(Ta=25°C)
Symbol
VDS VGSS ID PD Tch Tstg
Ratings
20 10 50 100 150 -55~150
Unit
V V mA mW °C °C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time
(Q1,Q2 Common)
(Ta=25°C)
Symbol
BVDSS Vth IDSS IGSS RDS(ON) ｜Yfs｜ Ciss Coss Crss ton toff
Test Condition
ID=100µA, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10m...
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