SPP11N60CFD

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge SPP11N60CFD VDS @ Tjmax 650 V RDS(on) 0.44 Ω ID 11 A PG-TO220 Type Package SPP11N60CFD PG-TO220 Ordering Code Q67040-S4618 Marking 11N60CFD Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C T C = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V ID puls EAS Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, Tj=125°C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature VGS VGS Ptot Tj , Tstg Rev. 2.6 Page 1 Value Unit A 11 7 28 340 mJ 0.6 11 A 40 V/ns ±20 V ±30 125 W -55... +150 °C 2007-08-30 SPP11N60CFD Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Maximum diode commutation speed VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt di F/dt Value 80 600 Unit V/ns A/µs Symbol RthJC Rt...