SPP11N80C3

www.DataSheet4U.com Final data SPP11N80C3 SPA11N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 0.45 11 V Ω A P-TO220-3-1 1 2 3 Type SPP11N80C3 SPA11N80C3 Package P-TO220-3-1 Ordering Code Q67040-S4438 Marking 11N80C3 11N80C3 P-TO220-3-31 Q67040-S4439 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 11 7.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 33 470 0.2 11 ±20 ±30 156 Value SPA Unit A 111) 7.11) 33 470 0.2 11 ±20 ±30 41 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.2A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-07-02 Final data Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C SPP11N80C3 SPA11N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, ...