HSM109WK
Silicon Schottky Barrier Diode for Battery Switch
ADE-208-059C(Z) Rev 3
Features
• The HSM109WK has two diffe...
HSM109WK
Silicon
Schottky Barrier Diode for Battery Switch
ADE-208-059C(Z) Rev 3
Features
The HSM109WK has two different (VF- IF) chips, and can change the main battery to the backup battery automatically.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM109WK
Laser Mark S7
Package Code MPAK
Outline
3
2
1
(Top View) 1 Anode
2 Anode
3 Cathode
HSM109WK
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Forward current Junction temperature Storage temperature
Symbol VRM IF Tj Tstg
Value (Pin1-3) Value (Pin2-3) Unit
10
10
V
30
30
mA
125
125
°C
–55 to +125
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage
Reverse current
ESD-Capability
Symbol VF
IR
—
Pin 1-3 Pin 2-3 Pin 1-3 Pin 2-3
Min Typ Max Unit Test Condition
0.1 — 0.5 —
0.3 V 0.8
IF = 1 mA
— — 5.0 µA VR = 5V — — 0.1
225 — — V
C = 200pF , RL = 100Ω , Both forward and reverse direction 5 pulse.
2
Main Characteristic
Reverse current I R (A)
10–6 10–7
10–8
10 –9
10–10
10–11
10–12
10–13 0
10 20
30
40 50
Reverse voltage V R (V)
Fig.1 Reverse current Vs.Reverse voltage
1.0 f = 470MHz
0.8
0.6
0.4
0.2
0 1.0
10
40
Reverse voltage V R (V)
Fig.3 Series resistance Vs.Reverse voltage
Series resistance r s (Ω)
LF=∆(LogC)/∆(LogVR )
Capacitance C (pF)
HSM109WK
100 f = 1MHz
80
60
40
20
0 1.0
10
40
Reverse voltage V R (V)
Fig.2 Capacitance Vs.Reverse voltage
0
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