2N5047

monolithic dual n-channel JFETs designed for . . . H Siliconix Performance Curves NQP See Sedion 4 High Gain Differential Amplifiers BENEFITS Minimum System Error and Calibration 5 mV Offset Maximum (2N5045) Low Drift 5 mV Drift Maximum (2N5045) *ABSOLUTE MAXIMUM RATINGS (25°C) TO-71 See Section 6 Gate-Drain or Gate-Source Voltage ............... -50 V Forward Gate Current. . . . . . . . . . . . . . . . . . . . . . .. 30 mA Total Dissipation (25°C Free Air Temp.) ........ 400 mW Power Derating (to 175°C)................. 2.67 mW/oC Storage Temperature Range .............. -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ............. 300°C *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 52 D2 ~o .,3 6 PGl O 2 °D, 01 G2 Bottom View Characteristic (Note 1) 2NS04S 2NS046 2NS047 I _ - , . - - - + - , . . - - t - - , - - - I Unit Min Max Min Max Min Max Test Conditions 1...2.. S -1 -1 -1 pA 1..2. I~ 4 T ~ I IGSS Gate Reverse Current 1_-+--0_.2",5-+--+-_0,...2_5+---+_-0"..2",5-1 nA VGS = -30 V. VDS = 0 V ~V-G-S(-Of-f-I---G-at-e~~-o-ur-ce-c-u-tO-f-f-V-ol-ta-ge-1-2--S_00-.s~-~"'.--2sS1-0_-0-.s~-~-.-s2~S-_0-0-s1--~-.-s1-V~-rV-D-S-=-lS-V"'."'I-DT-==~olS-.05'"C"n-A~~--------1 15 C lOSS Drain SaturatIOn Curren' O.S 8.0 O.S 80 O.S 8.0 rnA VDS = lSV. VGS = 0 --6- Common-5ource Forward Transconductance 1.5 60 1.5 6.0 1.5 60 I--------------_+--
_-+_-+_--+-_+-~mmho 7 IVfsl ~~~~~~;:urce Forward 15 1 S 1.5 ---S DI-----~c,...o...