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LM5111 Dual 5A Compound Gate DriverCapability
July 2004
LM5111 Dual 5A Compound Gate Driver
General Description
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 package. n Independent inputs (TTL compatible) n Fast propagation times (25 ns typical) n Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load) n Available in dual non-inverting, dual inverting and combination configurations n Supply rail under-voltage lockout protection n Pin compatible with industry standard gate drivers
Typical Applications
n Synchronous Rectifier Gate Drivers n Switch-mode Power Supply Gate Driver n Solenoid and Motor Drivers
Features
n Independently drives two N-Channel MOSFETs n Compound CMOS and bipolar outputs reduce output current variation n 5A sink/3A source current capability n Two channels can be connected in parallel to double the drive current
Package
n SOIC-8
Pin Configurations
20112301
SOIC-8
© 2004 National Semiconductor Corporation
DS201123
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LM5111
Ordering Information
Order Number LM5111-1M LM5111-1MX LM5111-2M LM5111-2MX LM5111-3M LM5111-3MX Package Type SOIC-8 SOIC-8 SOIC-8 SOIC-8 SOIC-8 SOIC-8 NSC Package Drawing M08A M08A M08A M08A M08A M08A Supplied As Shipped in anti-static units, 95 Units/Rail 2500 shipped in Tape & Reel Shipped in anti-static units, 95 Units/Rail 2500 shipped in Tape & Reel Shipped in anti-static units, 95 Units/Rail 2500 shipped in Tape & Reel
Block Diagram
20112303
Block Diagram of LM5111
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LM5111
Pin Description
Pin 1 2 3 4 5 Name NC IN_A VEE IN_B OUT_B Description No Connect ‘A’ side control input Ground reference for both inputs and outputs ‘B’ side control input Output for the ‘B’ side driver. TTL compatible thresholds. Connect to power ground. TTL compatible thresholds. Voltage swing of this output is from VCC to VEE. The output stage is capable of sourcing 3A and sinking 5A. Locally decouple to VEE. Voltage swing of this output is from VCC to VEE. The output stage is capable of sourcing 3A and sinking 5A. Application Information
6 7
VCC OUT_A.
Positive output supply Output for the ‘A’ side driver.
8
NC
No Connect
Configuration Table
Part Number LM5111-1M LM5111-2M LM5111-3M “A” Output Configuration Non-Inverting Inverting Inverting “B” Output Configuration Non-Inverting Inverting Non-Inverting SOIC- 8 SOIC- 8 SOIC- 8 Package
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LM5111
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VCC to VEE IN to VEE −0.3V to 15V −0.3V to 15V
Storage Temperature Range, (TSTG) Maximum Junction Temperature, (TJ(max)) Operating Junction Temperature ESD Rating
−55˚C to +150˚C +150˚C +125˚C 2kV
Electrical Characteristics
TJ = −40˚C to +125˚C, VCC = 12V, VEE = 0V, No Load on OUT_A or OUT_B, unless otherwise specified. Symbol VCCR VCCH ICC Parameter VCC Operating Range VCC Under Voltage Lockout (rising) VCC Under Voltage Lockout Hysteresis VCC Supply Current (ICC) IN_A = IN_B = 0V (5111-1) IN_A = IN_B = VCC (5111-2) IN_A = VCC, IN_B = 0V (5111-3) CONTROL INPUTS VIH VIL HYS IIL IIH Logic High Logic Low Input Hysteresis Input Current Low Input Current High IN_A=IN_B=VCC (5111-1-2-3) IN_B=VCC (5111-3) IN_A=IN_B=VCC (5111-2) IN_A=IN_B=VCC (5111-1) IN_A=VCC (5111-3) OUTPUT DRIVERS ROH ROL ISource ISink Output Resistance High Output Resistance Low Peak Source Current Peak Sink Current IOUT = −10 mA IOUT = + 10 mA OUTA/OUTB = VCC/2, 200 ns Pulsed Current OUTA/OUTB = VCC/2, 200 ns Pulsed Current 30 1.4 3 5 50 2.5 Ω Ω A A −1 10 −1 10 -1 0.8 1.75 1.35 400 0.1 18 0.1 18 0.1 1 25 1 25 1 µA 2.2 V V mV Conditions VCC−VEE VCC−VEE Min 3.5 2.3 2.9 230 1 1 1 2 2 2 mA Typ Max 14 3.5 Units V V mV
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LM5111
Electrical Characteristics
Symbol td1 td2 tr tf Parameter SWITCHING CHARACTERISTICS
(Continued) TJ = −40˚C to +125˚C, VCC = 12V, VEE = 0V, No Load on OUT_A or OUT_B, unless otherwise specified. Conditions CLOAD = 2 nF, see Figure 1 Min Typ Max Units
Propagation Delay Time Low to High, IN rising (IN to OUT)
25 25 14 12
40 40 25 25
ns ns ns ns
Propagation Delay Time High to CLOAD = 2 nF, see Figure Low, IN falling (IN to OUT) 1 Rise Time Fall Time CLOAD = 2.0 nF, see Figure 1 CLOAD = 2 nF, see Figure 1 TJ = 150˚C
LATCHUP PROTECTION AEC - Q100, Method 004 500 mA
Note 1: Absolute Maximum Ratings are limits beyond which .