16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4416016
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
Description
The µPD4416016 is a...
Description
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4416016
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
Description
The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
Features
1,048,576 words by 16 bits organization Fast access time : 15, 17 ns (MAX.) Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) Output Enable input for easy application
Ordering Information
Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 250 240 At standby 10
µPD4416016G5-A15-9JF µPD4416016G5-A17-9JF
54-PIN PLASTIC TSOP (II) (10.16 mm (400))
3.3 ± 0.3
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Document No. M14081EJ5V0DS00 (5th edition) Date Published December 2000 NS CP(K) Printed in Japan
The mark shows major revised points.
©
1999
µPD4416016
Pin Configuration (Marking Side)
/xxx indicates active low signal.
54-PIN PLASTIC TSOP (II) (10.16 mm (400)) [µPD4416016G5−xxx−9JF]
I/O 13 VCC I/O 14 I/O 15 GND I/O 16 A0 A1 A2 A3 A4 /UB /CS VCC /WE NC A5 A6 A7 A8 A9 I/O 1 VCC I/O 2 I/O 3 GND I/O 4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22...
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