UPD44164184

DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD44164084, µPD44164184 and µPD44164364 integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features 1.8 ± 0.1 V power supply and HSTL I/O DLL circuitry for wide output data valid window and future frequency scaling Pipelined double data rate operation Common data input/output bus Four-tick burst for reduced address frequency Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to receiving device Internally self-timed write control Clock-stop capability with µs restart User programmable impedance output Fast clock cycle time : 4.0 ns (250 MHz), 5.0 ns (200 MHz), 6.0 ns (167 MHz) Simple control logic for eas...