STP3NB80

m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT s ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) VISO Tstg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Drain Current (continuous) at T c = 100 o C m o .c U 4 t e e h S a t a .D w w w 3 1 2 3 2 1 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Parameter ...