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STP36NF06 STP36NF06FP
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e N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP e h
VDSS 60 V 60 V R...
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STP36NF06 STP36NF06FP
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e N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP e h
VDSS 60 V 60 V RDS(on) <0.040 Ω <0.040 Ω ID 30 A 18 A(*)
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STP36NF06 STP36NF06FP
STripFET™ II POWER MOSFET
TYPE
TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
TO-220
3 1 2
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED
Ordering Information
SALES TYPE STP36NF06 STP36NF06FP
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj
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Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
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MARKING STP36NF06 STP36NF06FP
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INTERNAL SCHEMATIC DIAGRAM
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1 2
3
TO-220FP
PACKAGE TO-220 TO-220FP
PACKAGING TUBE TUBE
Value STP36NF06 60 60 ± 20 30 21 120 70 0.47 20 200 -55 to 175 18(*) 1...
