STU1955NL

S amHop Microelectronics C orp. h N-C hannel ES nhancement Mode Field E ffect Transistor a t a P R ODUC T S UMMAR Y D . I V w R w w DS S D ee U 4 t m o .c S T U/D1955NL Arp,12 2005 ver1.2 F E AT UR E S DS (ON) ( m W ) Max S uper high dense cell design for low R DS (ON ). 55 @ V G S = 10V 80 @ V G S = 4.5V R ugged and reliable. 55V 10A TO-252 and TO-251 P ackage. D G S G D S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C w w w .D a b t a S a (T A =25 C unles s otherwis e noted) S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 60 55 20 10 8 23 15 50 35 Unit V V V A A A. U 4 W C A Vspike (d) e h t e G U 4 .c D S m o 25 C 70 C -P ulsed m o c -55 to 175 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R w JA w w .D at a 3 Sh t e e C /W C /W 50 S T U/D1955NL N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 4A V DS = 5V, ...