STU10NC70Z

w w a D . w S a t e e h U 4 t m o .c STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™ III MOSFET VDSS 700 V 700 V RDS(on) <0.75Ω <0.75Ω ID 9.4 A 9.4 A TYPE STU10NC70Z STU10NC70ZI s s s s s s TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 Max220 2 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C w Drain Current (continuos) at TC = 100° C Total Dissipation at TC = 25°C Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Drain Current (pulsed) w w t a .D Parameter S a e h U 4 t e STU10NC70Z .c m o I-Max220 Value STU10NC70ZI 700 700 ±25 9.4 5.9 37.6 ...