CMOS LSI m LE25FV101T o .c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h S Featuresa t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Progr...
