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2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching Regu...
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2SK3407
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching
Regulator Applications
Unit: mm
· · · ·
Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This
transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-12
www.DataSheet4U.com
2SK3407
Electrical Characteristics (Ta = 25°C)
Charac...