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AZ2822 Dataheets PDF



Part Number AZ2822
Manufacturers Shanghai SIM-BCD Semiconductor
Logo Shanghai SIM-BCD Semiconductor
Description Dual Low Voltage Power Amplifier
Datasheet AZ2822 DatasheetAZ2822 Datasheet (PDF)

DUAL LOW VOLTAGE POWER AMPLIFIER General Description The AZ2822 is a monolithic integrated dual power amplifier. it is intended for use in portable cassette players and radios as dual audio power amplifier. w w w .D at h S a t e e 4U . m o c Data Sheet AZ2822 Features · · · · · Supply Voltage Down to 1.8V Low Crossover Distortion Low Quiescent Current Bridge or Stereo Configuration Few External Components This IC is available in standard DIP-8 package. DIP-8 Figure 1. Package Type o.

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DUAL LOW VOLTAGE POWER AMPLIFIER General Description The AZ2822 is a monolithic integrated dual power amplifier. it is intended for use in portable cassette players and radios as dual audio power amplifier. w w w .D at h S a t e e 4U . m o c Data Sheet AZ2822 Features · · · · · Supply Voltage Down to 1.8V Low Crossover Distortion Low Quiescent Current Bridge or Stereo Configuration Few External Components This IC is available in standard DIP-8 package. DIP-8 Figure 1. Package Type of AZ2822 Pin Configuration w w w .D t a S a 1 2 3 4 e h t e U 4 .c m o P Package (DIP-8) 8 7 6 5 IN-(1) IN+(1) IN+(2) IN-(2) OUT(1) VCC OUT(2) GND Figure 2. Pin Configuration of AZ2822 (Top View) Dec. 2004 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 w w w .D at h S a t e e 4U . m o c Data Sheet DUAL LOW VOLTAGE POWER AMPLIFIER Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name OUT(1) VCC OUT(2) GND IN-(2) IN+(2) IN+(1) IN-(1) Output of amplifier 1 Power supply for all internal circuits Output of amplifier 2 Ground pin for all internal circuits Inverting input pin for amplifier 2 Non-inverting input pin for amplifier 2 Non-inverting input pin for amplifier 1 Inverting input pin for amplifier 1 Function AZ2822 Functional Block Diagram VCC 2 _ OUT(1) 8 7 1 IN-(1) IN+(1) AMP 1 + + AMP 2 _ 6 5 OUT(2) 3 IN+(2) IN-(2) 4 GND Figure 3. Functional Block Diagram of AZ2822 Dec. 2004 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL LOW VOLTAGE POWER AMPLIFIER Ordering Information AZ2822 Circuit Type E1: Lead Free Blank: Tin Lead Package P: DIP-8 Part Number Tin Lead AZ2822P Lead Free AZ2822P-E1 Tin Lead AZ2822P Marking ID LeadFree AZ2822P-E1 AZ2822 Package DIP-8 Temperature Range 0 to 70oC Packing Type Tube The listed part numbers are used during the transition to lead-free products. After the transition completed, lead-free products will be considered as the "standard" and we will resume the original part numbers. Absolute Maximum Ratings (Note 1) Parameter Supply Voltage Peak Output Current Total Power Dissipation Storage Temperature TA=50oC TCASE=50oC TSTG -55 Symbol VCC IO PD 1.4 150 W oC Value Min Max 15 1 1 Unit V A W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Ambient Temperature Symbol TA Min 0 Max 70 Unit oC Dec. 2004 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL LOW VOLTAGE POWER AMPLIFIER Electrical Characteristics (VCC=6V, TA= 25oC, unless otherwise specified.) Stereo (Test circuit of figure 4) Parameter Supply Voltage Quiescent Output Voltage Quiescent Drain Current Input Bias Current Symbol VCC VO ΙD IB RL=32Ω VCC=9V VCC=6V VCC=4.5V VCC=3V VCC=2V Output Power (each channel) (f=1kHz,d=10%) PO RL=16Ω RL=8Ω RL=4Ω VCC=6V VCC=9V VCC=6V VCC=6V VCC=4.5V VCC=3V Distortion(f=1kHz) d RL=32Ω, PO=40mW RL=16Ω, PO=75mW RL=8Ω, PO=150mW Closed Loop Voltage Gain Channel Balance Input Resistance Total Input Noise Supply Voltage Rejection Channel Separation GV f=1kHz f=1kHz RS=10kΩ, B=22Hz to 22kHz f=100Hz, C1=C2=100µF f=1kHz 24 36 100 3 28 50 300 450 170 15 90 VCC=6V VCC=3V Conditions Min 1.8 2.7 1.2 6 100 300 120 60 20 5 220 900 360 480 250 80 0.3 0.3 1.0 40 41 dB dB kΩ µV dB dB % mW 9 mA nA Typ Max 9 Unit V V AZ2822 ∆GV RI eN SVR CS ±1 Dec. 2004 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL LOW VOLTAGE POWER AMPLIFIER Electrical Characteristics (Continued) (VCC=6V, TA= 25oC, unless otherwise specified.) Bridge (Test circuit of figure 5) Parameter Supply Voltage Output Offset Voltage (between the outputs) Quiescent Drain Current Input Bias Current Symbol VCC VOS ΙD IB RL=32Ω VCC=9V VCC=6V VCC=4.5V VCC=3V VCC=2V Output Power (each channel) (f=1kHz,d=10%) PO RL=16Ω VCC=9V VCC=6V VCC=3V RL=8Ω VCC=6V VCC=4.5V VCC=3V RL=4Ω VCC=4.5V VCC=3V VCC=2V Distortion(f=1kHz) Closed Loop Voltage Gain Input Resistance Total Input Noise Supply Voltage Rejection Power Bandwidth (-3dB) d GV RI eN SVR B PO=0.5W, RL=8Ω, f=1kHz f=1kHz f=1kHz RS=10kΩ, B=22Hz to 22kHz f=100Hz PO=1W, RL=8Ω 36 100 4 40 26 200 900 50 320 RL=8Ω RL=∞ Conditions Min 1.8 -50 6 100 1000 400 200 65 8 2000 800 120 1100 540 170 600 230 60 1 40 41 % dB kΩ µV dB kHz mW Typ Max 9 50 9 Unit V mV mA nA AZ2822 Dec. 2004 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL LOW VOLTAGE POWER AMPLIFIER Electrical Characteristics (Continued) Vcc + C3 10 µF 2 AZ2822 IN(L) R1 10k + C1 100 µF 7 8 + _ AMP 1 1 IN(R) R2 10k + C2 100 µF 6 5 + AMP 2 _ C6 0.1 µF R3 4.7 C5 470µF 3 + C7 0.1 µF R4 4.7 C4 470 µF + RL RL 4 U1 AZ2822 Figure 4. Test Circu.


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