Document
co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply)
DC-DC converters
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C
2SK3518-01MR m
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
Ratings 500 ±6 ±24 ±30 6 115 20 5 2.16 32 Operating and storage Tch +150 -55 to +150 temperature range Tstg Isolation Voltage VISO *5 2 *1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Unit V A A V A mJ kV/µs kV/µs W
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol V(BR)DSS VGS(th) IDSS Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=500V VGS=0V Tch=125°C VDS=400V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 Ω V CC=250V ID=6A VGS=10V L=5.9mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
w
w
w
t a .D
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr
*4 VDS < = 500V
S a
e h
U 4 t e
.c
m o
Drain(D) Source(S)
Equivalent circuit schematic
Gate(G)
°C °C kVrms
*5 t=60sec, f=60Hz
Min.
500 3.0
Typ.
Max.
5.0 25 250 100 1.50 675 90 4.5 15 7.5 30 7.5 22.5 10.5 4.5
Units
V V µA nA Ω S pF
2.5
Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
10 1.15 5 430 60 2.5 10 5 20 5 15 6.5 2.5 1.00 0.5 1.7
6
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
w
w
w
.D
a
S a t
e e h
U 4 t
1.50
m o .c
ns nC A V µs µC
Min.
Typ.
Max.
3.91 58.0
Units
°C/W °C/W
1
2SK3518-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
Typical Output Characteristics
10 9
ID=f(VDS):80µs Pulse test,Tch=25°C
20V 10V 7.0V
50
40
8 6.5V 7
30
6
PD [W]
ID [A]
5 6.0V 4 3
20
10
2 1
VGS=5.5V
0 0 25 50 75 100 125 150
0 0 2 4 6 8 10 12 14 16 18 20 22
Tc [°C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10 100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
1
10
ID[A]
gfs [S]
0.1 1 0.01 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.1 0.01
0.1
1
10
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
4 4.0 3.5 3 VGS=5.5V 6.0V 6.5V 3.0
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V
RDS(on) [ Ω ]
RDS(on) [ Ω ]
7.0V 10V 2 20V
2.5 max. 2.0 typ. 1.5 1.0 0.5
1
0 0 2 4 6 8 10
0.0 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [°C]
2
2SK3518-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0 6.5 6.0 5.5 5.0 max. 16 14 12 20 18
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A, Tch=25°C
VGS(th) [V]
4.5
VGS [V]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
10 8 6 4 2 0 0 5 10
Vcc= 100V 250V 400V
15
20
25
Tch [°C]
Qg [nC]
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
10n
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
1n Ciss 10
C [F]
100p Coss
IF [A]
1 Crss 0.1 0.00
10p
1p 10
-1
10
0
10
1
10
2
10
3
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
500
Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V
10
2
400
tf td(off)
IAS=2.4A
300
10
1
td(on)
EAS [mJ]
t [ns]
200
IAS=3.6A
tr
IAS=6A 100
10
0
0
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [°C]
3
2SK3518-01MR
FUJI POWER MOSFET
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=50V
Avalanche Current I AV [A]
10
1
Single Pulse
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
http://www.fujielectric.co.jp/denshi/scd/
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