TSAL6200

www.vishay.com TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8389 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Peak wavelength: λp = 940 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 17° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 72 Note Test conditions see table “Basic Characteristics” ϕ (deg) ± 17 λp (nm) 940 tr (ns) 15 ORDERING INFORMATION ORDERING CODE TSAL6200 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance juncti...