SD1476

SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 240 W MIN. WITH 12.0 dB GAIN 2 x .437 x .450 2LFL (M165) epoxy sealed ORDER CODE SD1476 BRANDING SD1476 PIN CONNECTION DESCRIPTION The SD1476 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band I television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 70 40 4.0 25 430 +200 − 50 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 0.4 °C/W 1/8 SD1476 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCER BVCEO BVEBO I CEO I CBO hFE DYNAMIC Symbol IC = 50mA IC = 50mA IC = 100mA IE = 20mA VCE = 30V VCB = 30V VCE = 5V IE = 0mA RBE = 51Ω IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 7A 70 68 40 4.0 — — 10 — — — — — — — — — — — 10 10 50 V V V V mA mA — Test Conditions Value Min. Typ. Max. Unit POUT * GP ηc COB Note: f...