MRF16030

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16030/D The RF Line NPN Silicon MRF16030 30 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts Minimum Efficiency = 40% @ 30 Watts Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Emitter–Base Voltage Collector–Current Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCES VEBO IC PD Tstg Value 60 4.0 4.0 103 0.58 – 65 to +150 Unit Vdc Vdc Adc Watts °C/W °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) RθJC 1.7 °C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Br...