MRF166C

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166C/D The RF MOSFET Line RF Power Field Effect Transistors MRF166C 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Facilitates Manual Gain Control, ALC and Modulation Techniques Excellent Thermal Stability, Ideally Suited for Class A Operation Low Crss — 4.0 pF @ VDS = 28 V Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. D CASE 319–07, STYLE 3 G S MAXIMUM RATINGS Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 20 4.0 70 0.4 – 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 10 1 ELECTRICAL CHAR...