STS4DPF20L

DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8 STripFET™ POWER MOSFET TYPE STS4DPF20L s s STS4DPF20L VDSS 20 V RDS(on) <0.08 Ω ID 4A s TYPICAL RDS(on) = 0.07 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 16 4 2.5 16 1.6 2 Unit V V V A A A W W () Pulse width limited by safe operating area. February 2002 . Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STS4DPF20L THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temperature Single Operation Dual Operating 62.5 78 -55 to150 -55 to 150 °C/W °...