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2SK3919 Dataheets PDF



Part Number 2SK3919
Manufacturers NEC
Logo NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet 2SK3919 Datasheet2SK3919 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A) •.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A) • Low Ciss: Ciss = 2050 pF TYP. • 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±64 ±256 36 1.0 150 −55 to +150 27 73 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17078EJ4V0DS00 (4th edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SK3919 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 16 A VGS = 10 V, ID = 32 A VGS = 5.0 V, ID = 16 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.5 V, ID = 32 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±100 UNIT µA nA V S 2.0 9.7 2.5 19 4.5 6.8 2050 460 330 16 19 53 22 3.0 Drain to Source On-state Resistance 5.6 13.7 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 20 V VGS = 10 V ID = 64 A IF = 64 A, VGS = 0 V IF = 64 A, VGS = 0 V di/dt = 100 A/µs 42 8 15 0.97 23 11 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D17078EJ4V0DS 2SK3919 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 PT - Total Power Dissipation - W 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 100 80 60 40 20 0 TC - Case Temperature - °C 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) ID - Drain Current - A 100 ID(DC) PW = 100 µs 10 RDS(on) Limited (at VGS = 10 V) 1 Power Dissipation Limited 1 ms 10 ms TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 3.47°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet D17078EJ4V0DS 3 2SK3919 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 250 ID - Drain Current - A 1000 100 10 1 0.1 200 150 100 VGS = 10 V 5.0 V 50 Pulsed 0 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V ID - Drain Current - A Tch = −55°C 25°C 75°C 125°C 150°C VDS = 10 V Pulsed 0 1 2 3 4 5 6 0.01 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 VGS(off) - Gate Cut-off Voltage - V 100 VDS = 10 V ID = 1 mA 3 10 Tch = −55°C 25°C 75°C 125°C 150°C 2 1 VDS = 10 V Pulsed 0.1 0.1 1 10 100 ID - Drain Current - A 1 0 -100 -50 0 50 100 150 200 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ 15 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 15 Pulsed 10 VGS = 5.0 V 10 5 10 V 5.


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