Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A) • Low Ciss: Ciss = 2050 pF TYP. • 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
25 ±20 ±64 ±256 36 1.0 150 −55 to +150 27 73
V V A A W W °C °C A mJ
(TO-252)
Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
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Document No. D17078EJ4V0DS00 (4th edition) Date Published January 2005 NS CP(K) Printed in Japan
The mark
shows major revised points.
2004
2SK3919
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 16 A VGS = 10 V, ID = 32 A VGS = 5.0 V, ID = 16 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12.5 V, ID = 32 A VGS = 10 V RG = 10 Ω
MIN.
TYP.
MAX. 10 ±100
UNIT
µA
nA V S
2.0 9.7
2.5 19 4.5 6.8 2050 460 330 16 19 53 22
3.0
Drain to Source On-state Resistance
5.6 13.7
mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 20 V VGS = 10 V ID = 64 A IF = 64 A, VGS = 0 V IF = 64 A, VGS = 0 V di/dt = 100 A/µs
42 8 15 0.97 23 11
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 µs Duty Cycle ≤ 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D17078EJ4V0DS
2SK3919
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120
PT - Total Power Dissipation - W
40 35 30 25 20 15 10 5 0
0 25 50 75 100 125 150 175
100 80 60 40 20 0
TC - Case Temperature - °C
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
ID - Drain Current - A
100
ID(DC)
PW = 100 µs
10
RDS(on) Limited (at VGS = 10 V)
1
Power Dissipation Limited
1 ms 10 ms
TC = 25°C Single pulse
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W
1000 Rth(ch-A) = 125°C/W 100
10
Rth(ch-C) = 3.47°C/W
1
0.1 Single pulse 0.01 100 µ
1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet D17078EJ4V0DS
3
2SK3919
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
300 250
ID - Drain Current - A
1000 100 10 1 0.1
200 150 100
VGS = 10 V
5.0 V 50 Pulsed 0 0 0.5 1 1.5 2 2.5
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Tch = −55°C 25°C 75°C 125°C 150°C
VDS = 10 V Pulsed 0 1 2 3 4 5 6
0.01
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
4
VGS(off) - Gate Cut-off Voltage - V
100
VDS = 10 V ID = 1 mA 3
10
Tch = −55°C 25°C 75°C 125°C 150°C
2
1 VDS = 10 V Pulsed 0.1 0.1 1 10 100
ID - Drain Current - A
1
0 -100
-50
0
50
100
150
200
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - mΩ
15
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
Pulsed
15 Pulsed
10 VGS = 5.0 V
10
5 10 V
5.