®
STP30NE06 STP30NE06FP
N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE...
®
STP30NE06 STP30NE06FP
N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP30NE06 STP30NE06FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.050 Ω < 0.050 Ω
ID 30 A 17 A
TYPICAL RDS(on) = 0.042 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
1 2
3
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DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot V ISO dV/dt Ts tg Tj
’
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value STP30NE06 STP30NE06FP 60 60 ± 20 30 21 120 80 0.53 7 -65 to 175 175
( 1) ISD ≤ 30 ...
