®
STP30NE03L STP30NE03LFP
N - CHANNEL 30V - 0.028 Ω - 30A TO-220/TO-220FP STripFET™ POWER MOSFET
TYPE STP30NE03L STP30...
®
STP30NE03L STP30NE03LFP
N - CHANNEL 30V - 0.028 Ω - 30A TO-220/TO-220FP STripFET™ POWER MOSFET
TYPE STP30NE03L STP30NE03LF P
s s s s
V DSS 30 V 30 V
R DS( on ) < 0.04 Ω < 0.04 Ω
ID 30 A 17 A
TYPICAL RDS(on) = 0.028 Ω 100% AVALANCHE TESTED LOW GATE CHARGE LOW THRESHOLD DRIVE
3 1 2
1 2 3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
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ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Value ST P30NE03L V DS V DGR V GS ID ID I DM ( ) P tot V ISO T s tg Tj June 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature
o o o
Unit
STP30NE03L FP 30 30 ± 20 V V V 17 12 68 25 0.17 2000 A A A W W/ oC V
o o
30 21 120 70 0.47 -65 to 175 175
C C 1/9
() Pulse width limited by safe operating area
STP30NE03L/FP
THERMAL DATA
TO-220 R thj -case R thj -amb R thc-sink Tl T...