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DS2064

Dallas Semiconducotr

8K x 8 Static RAM

DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 ...


Dallas Semiconducotr

DS2064

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Description
DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE CE2 A8 A9 A11 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 Low power CMOS design Standby current 50 nA max at 100 nA max at 1 µA max at tA = 25°C VCC = 3.0V tA = 25°C VCC = 5.5V tA = 60°C VCC = 5.5V Full operation for VCC = 4.5V to 5.5V Data Retention Voltage = 5.5V to 2.0V Access time equals 200 ns at 5.0V Operating temperature range of –40°C to +85°C Full static operation TTL compatible inputs and outputs Available in 28–pin DIP and 28–pin SOIC packages Suitable for both battery operated and battery backup applications DS2064–200 28–PIN DIP (600 MIL) DS2064S–200 28–PIN SOIC (330 MIL) PIN DESCRIPTION A0–A12 DQ0–DQ7 CE1, CE2 WE OE VCC GND NC – – – – – – – – Address Inputs Data Input/Output Chip Enable Inputs Write Enable Input Output Enable Input 5V Power Supply Input Ground No Connection DESCRIPTION The DS2064 is a 65536–bit low power, fully static random access memory organized as 8192 words by eight bits using CMOS technology. The device operates from a single power supply with a voltage input between 4.5V and 5.5V. The chip enable inputs (CE1 and CE2) are used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operate and battery backup applications. The device provides fast access time of 200 ns and is mos...




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