MRF21045LR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 10 Watts Avg. Efficiency — 23.5% Gain — 15 dB IM3 — - 37.5 dBc ACPR — - 41 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 2170 MHz, 45 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semi...