SM2G54

SM2G54,SM2L54 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2G54,SM2L54 AC POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 800V R.M.S. On−State Current High Commutation (dv / dt) : IT (RMS) = 2A : (dv / dt) c = 5V / µs (Min.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage R.M.S. On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg 2 RATING 800 2 8 (50Hz) 8.8 (60Hz) 0.32 50 3 0.3 10 1.6 −40~125 −40~125 UNIT V A A A s A / µs W W V A °C °C 2 1 : T1 2 : T2 3 : GATE JEDEC JEITA TOSHIBA Weight: 0.82g − − − Note: di / dt test condition VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 1 2004-07-15 SM2G54,SM2L54 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Communication VTM VGD IH Rth (j−a) dv / dt (dv / dt) c ITM = 3A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Ambient, AC VDRM = 800V, Tj = 125°C Exponen...