Document
SSP45N20B/SSS45N20B
November 2001
SSP45N20B/SSS45N20B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
• • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSP45N20B 200 35 22.2 140 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
SSS45N20B 35 * 22.2 * 140 * 650 35 17.6 5.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
176 1.41 -55 to +150 300
57 0.45
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. SSP45N20B 0.71 0.5 62.5 SSS45N20B 2.2 -62.5 Units °C/W °C/W °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
SSP45N20B/SSS45N20B
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.2 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 17.5 A VDS = 40 V, ID = 17.5 A
(Note 4)
2.0 ---
-0.052 36
4.0 0.065 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---3300 460 120 4300 600 155 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 45 A, VGS = 10 V
(Note 4, 5)
VDD = 100 V, ID = 45 A, RG = 25 Ω
(Note 4, 5)
--------
45 340 360 270 133 19 67
100 690 730 550 173 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 35 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 45 A, dIF / dt = 100 A/µs
(Note 4)
------
---245 2.27
35 140 1.5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.8mH, IAS = 35A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 45A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
SSP45N20B/SSS45N20B
Typical Characteristics
10
2
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
2
10
1
10
1
150 C 25 C -55 C
o o
o
10
0
10
0
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.30 10 0.25
2
RDS(ON) [Ω ], Drain-Source On-Resistance
0.20
0.15
VGS = 20V
IDR, Reverse Drain Current [A]
VGS = 10V
10
1
0.10
150℃
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
0.05
※ Note : TJ = 25℃
0.00 0 35 70 105 140 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figur.