STD882

2 Semiconductor STD882 NPN Silicon Transistor Description Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772 Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) Ordering Information Type NO. STD882 Marking STD882 Package Code MPT Outline Dimensions unit : mm 6.5±0.2 21.5±1.0 1.1±0.1 1.2 Max. 14.0±0.40 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 5.0±0.2 1.27 Typ. 2.54 Typ. 1 2 3 0.5±0.2 3.4±0.2 2.0±0.1 12.5 Min. 8.5±0.2 PIN Connections 1. Emitter 2. Collector 3. Base KST-B010-001 1 STD882 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current(DC) Collector current(Pulse) * Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) * PC Tj Tstg Ratings 40 15 7 5 8 1.2 150 -55~150 Unit V V V A A W °C °C * Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.) Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE fT Cob 2 Test Condition IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=100mA ...