STD882D

2 Semiconductor STD882D NPN Silicon Transistor Description Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) Ordering Information Type NO. STD882D Marking STD882 Package Code D-PAK Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-D003-000 1 STD882D Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current(DC) Collector current(Pulse) * Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) * PC Tj Tstg Ratings 40 15 7 5 8 15 150 -55~150 Unit V V V A A W °C °C * Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.) Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE hFE fT Cob 1 2 Test Condition IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=100mA VCE=6V, IE=-50mA VCB=20V, IE=0, f=1MHz Min. Typ. Max. 40 15 7 160 100 150 0.1 0.1 320 0.4 50 Unit V V V µA µA V MHz pF VCE(sat) KST-D003-000 2 STD882D Ele...