KM29W32000TS

KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision History w w w Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet, 1998 Data Sheet, 1999 1) Added CE don’ t care mode during the data-loading and reading .D at h S a t e e 4U . m o c FLASH MEMORY Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final w w w .D t a S a e h t e U 4 .c m o The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 w w w .D at h S a t e e 4U . m o c KM29W32000TS 4M x 8 Bit NAND Flash Memory FEATURES Voltage Supply : 2.7V ~ 5.5V Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register 528-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.) Fast Write Cycle Time - Program time : 250µs(typ.) - Block Erase time : 2ms(typ.) Command/Address/Data Multiplexed I/O port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - Data Retention : 10 years Command Regis...