MBD110DWT1

ON Semiconductort Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons: SOT–363 Area (mm2) Max Package PD (mW) Device Count 4.6 120 2 SOT–23 7.6 225 1 MBD110DWT1 MBD330DWT1 MBD770DWT1 ON Semiconductor Preferred Devices 6 5 4 1 2 3 CASE 419B–01, STYLE 6 SOT–363 Space Savings: Package SOT–363 1  SOT–23 40% 2  SOT–23 70% Anode 1 N/C 2 Cathode 3 6 Cathode 5 N/C 4 Anode The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 –55 to +125 –55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °C °C DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of ...