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IHW20T120

Infineon

IGBT in Trench and Fieldstop Tech

m IHW20T120 o Soft Switching Series .c U 4 t e Low Loss DuoPack in Trench and Fieldstop technology e : IGBT h with soft,...


Infineon

IHW20T120

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m IHW20T120 o Soft Switching Series .c U 4 t e Low Loss DuoPack in Trench and Fieldstop technology e : IGBT h with soft, fast recovery anti-parallel EmCon HE diode S a at .D w w w Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmCon™ HE diode Low EMI Application specific optimisation of inverse diode VCE IC VCE(sat),Tj=25°C 1.7V Tj,max C Type IHW20T120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Short circuit withstand time 1) m o .c U 4 t e e h S a t a .D w w w G E Marking Package Ordering Code Q67040-S4652 1200V 20A 150°C H20T120 TO-247AC Symbol Value 1200 40 20 Unit V A VCE IC ICpuls - 60 60 IF 23 13 IFpuls 36 IFSM A 50 VGE tSC Ptot Tj Tstg VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C Power dissipation...




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