Document
Bulletin I27130 rev. G 10/02
IRK.26 SERIES
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded
27 A
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV) @ 85°C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz I t
2
IRK.26
27 60 400 420 800 730 8000 400 to 1600 - 40 to 125 - 40 to125
Units
A A A A A2s A2s A 2√ s V
o o
@ 50Hz @ 60Hz
I 2√ t VRRM range TSTG TJ
(*) As AC switch.
C C
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1
IRK.26 Series
Bulletin I27130 rev. G 10/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04 06 08 IRK.26 10 12 14 16
VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V
400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600
IRRM IDRM 125°C mA
15
On-state Conduction
Parameters
IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 60 A 400 420 335 350 470 490 I2t Max. I2t for fusing 800 730 560 510 1100 1000 I2√t Max. I2√ t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/µs 1.95 V 8000 0.92 0.95 12.11 11.82 A2√s V mΩ A s
2
IRK.26
27 27
Units
Conditions
180o conduction, half sine wave, TC = 85oC
I(RMS)
t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms reapplied
or
I(RMS)
Sinusoidal half wave, Initial TJ = TJ max.
No voltage 100% VRRM reapplied TJ = 25oC,
no voltage reapplied No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied Initial TJ = TJ max.
t= 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = 25oC, from 0.67 VDRM, ITM =π x I T(AV), I = 500mA,
g
VT(TO) Max. value of threshold
TJ = TJ max TJ = TJ max TJ = 25oC
tr < 0.5 µs, tp > 6 µs TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x π x IAV < I < π x IAV
(1) I2t for time tx = I2√t x √tx (4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
2
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IRK.26 Series
Bulletin I27130 rev. G 10/02
Triggering
Parameters
PGM IGM Max. peak gate power
IRK. 26
10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 6
Units
W A
Conditions
PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative
V
TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C
o
Anode supply = 6V resistive load Anode supply = 6V resistive load
mA
V mA
TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied
Blocking
Parameters
IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) 3500 (1 sec) dv/dt Max. critical rate of rise 500 V/µs V 50 Hz, circuit to base, all terminals shorted TJ = 125oC, linear to 0.67 VDRM, 15 mA TJ = 125oC, gate open circuit
IRK. 26
Units
Conditions
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.
Thermal and Mechanical Specifications
Parameters
TJ Tstg Junction operating temperature range Storage temp. range
IRK.26
- 40 to 125 - 40 to 125
Units
Conditions
°C
RthJC Max. internal thermal resista.