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TLN212F

Toshiba Semiconductor

INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS

TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera ...



TLN212F

Toshiba Semiconductor


Octopart Stock #: O-528500

Findchips Stock #: 528500-F

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Description
TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Light Source For Auto Focus Optical radiation of current confining LED chip is condensed by a resin lens. High output Effective emission diameter of 388 × 296µm Optical output efficiently radiated in solid angle of 1.136sr Can be operated at VCC = 3V (which is equal to is two cells) TLN212(F) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current Pulse forward current Reverse voltage Operating temperature Storage temperature (Note 1) (Note 2) IF IFP VR Topr Tstg 50 800 1 −25~60 −40~90 mA mA V °C °C (Note 1): Permissible value for acceptance inspection / characteristic test and is guaranteed for actual application (Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%, power applied for 0.1s paused for 0.4s TOSHIBA ― Weight: 0.18g(typ.) IFP = 0.8A 1 2 16 0.22ms 1.56ms 2...




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