FLM5964-25F

w m C-Band Internally Matched FET o FEATURES .c High Output Power: P1dB = 44.5dBm (Typ.) U High Gain: G1dB = 10.0dB (Typ.) 4 t High PAE: ηadd = 37% (Typ.) e = 33.5dBm Low IM3 = -46dBc@Po e Broad Band: 5.9h ~ 6.4GHz S Impedance Matched Zin/Zout = 50Ω aSealed Package t Hermetically a DESCRIPTION D . The FLM5964-25F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-25F Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Tc = 25°C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with gate resistance of 25Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Symbol Test Conditions Min. -0.5 -5.0 43.5 VDS =10V, IDS = 0.65IDSS (Typ.), f = 5.9 ~ 6.4 GHz, ZS=ZL= 50 ohm f = 6.4 GHz, ∆f = 10 MHz 2-Tone Test Pout = 33.5dBm S.C.L. Channel to Case 10V x Idsr x Rth 9.0 -44 Limit Typ. Max. 10 10 -1.5 44.5 10.0 37 -46 1.4 15 -3.0 ±0.6 Unit A S V V dBm dB mA % Gate S...