MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP29N15E/D
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TMOS E-FET.™ Power Field Ef...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP29N15E/D
Product Preview
TMOS E-FET.™ Power Field Effect
Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MTP29N15E
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM
®
N–Channel D
G S
CASE 221A–06, TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C (VDD = 25 Vdc, VGS...