MSM56V16160F

Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM This version : Sep.1999 DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES · · · · · · · Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell 2-bank ´ 524,288-word ´ 16bit configuration 3.3V power supply ± 0.3V tolerance Input Output Refresh : LVTTL compatible : LVTTL compatible : 4096 cycles/64 ms Programmable data transfer mode - CAS Latency (1,2,3) - Burst Length (1,2,4,8,Full page) - Data scramble (sequential , interleave) · · CBR auto-refresh, Self-refresh capability Package: 50-pin 400mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160F-xxTS-K) xx : indicates speed rank. PRODUCT FAMILY Family MSM56V16160F-8 MSM56V16160F-10 Max. Frequency 125MHz 100MHz Access Time (Max.) tAC2 9ns 9ns tAC3 6ns 9ns 1/30 MSM56V16160F PIN CONFIGRATION (TOP VIEW) VCC DQ1 DQ2 VSSQ 1 2 3 4 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS DQ16 DQ15 VSSQ DQ14 DQ13 VCCQ DQ12 DQ11 VSSQ DQ10 DQ9 VCCQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 VSS DQ3 5 DQ4 6 VCCQ 7 DQ5 8 DQ6 9 VSSQ 10 DQ7 11 DQ8 12 VCCQ 13 LDQM 14 WE 15 CAS 16 RAS 17 CS 18 A11 19 A10 20 A0 21 A1 22 A2 23 A3 24 VCC 25 50-Pin Plastic TSOP (II) (K Type) Pin Name CLK CS CKE A0–A10 A11 RAS CAS WE Function ...