Document
E2G1047-18-25
¡ Semiconductor MSM56V16800D/DH
¡ Semiconductor
ThisMSM56V16800D/DH version: Mar. 1998
Pr el im in ar y
2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
FEATURES
• • • • • • • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank ¥ 1,048,576-word ¥ 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode – CAS latency (1, 2, 3) – CAS latency (2, 3)*1 – Burst length (1, 2, 4, 8, full page) – Burst length (1, 2, 4, 8)*1 – Data scramble (sequential, interleave) *1 : H version only. • CBR auto-refresh, Self-refresh capability • Package: 44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800D/DH-xxTS-K) xx indicates speed rank.
PRODUCT FAMILY
Family MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15 Max. Frequency 100 MHz 83 MHz 66 MHz Access Time (Max.) tAC2 9 ns 14 ns 9 ns tAC3 9 ns 10 ns 9 ns
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¡ Semiconductor PIN CONFIGURATION (TOP VIEW)
MSM56V16800D/DH
VCC DQ1 VSSQ DQ2 VCCQ DQ3 VSSQ DQ4 VCCQ NC NC WE CAS RAS CS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
DQM DQi VCC VSS VCCQ VSSQ NC
44 VSS 43 DQ8 42 VSSQ 41 DQ7 40 VCCQ 39 DQ6 38 VSSQ 37 DQ5 36 VCCQ 35 NC 34 NC 33 DQM 32 CLK 31 CKE 30 NC 29 A9 28 A8 27 A7 26 A6 25 A5 24 A4 23 VSS
44-Pin Plastic TSOP (II) (K Type)
Pin Name CLK CS CKE A0 - A10 A11 RAS CAS WE
Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable
Pin Name
Function Data Input/Output Mask Data Input/Output Power Supply (3.3 V) Ground (0 V) Data Output Power Supply (3.3 V) Data Output Ground (0 V) No Connection
Note:
The same power supply voltage must be provided to every VCC pin and VCCQ pin. The same GND voltage level must be provided to every VSS pin and VSSQ pin.
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¡ Semiconductor
MSM56V16800D/DH
PIN DESCRIPTION
CLK CS CKE Fetches all inputs at the "H" edge. Disables or enables device operation by asserting or deactivating all inputs except CLK, CKE and DQM. Masks system clock to deactivate the subsequent CLK operation. If CKE is deactivated, system clock will be masked so that the subsequent CLK operation is deactivated. CKE should be asserted at least one cycle prior to a new command. Address Row & column multiplexed. Row address: RA0 – RA10 Column address: CA0 – CA8 A11 RAS CAS WE DQM DQi Masks the read data of two clocks later when DQM is set "H" at the "H" edge of the clock signal. Masks the write data of the same clock when DQM is set "H" at the "H" edge of the clock signal. Data inputs/outputs are multiplexed on the same pin. Functionality depends on the combination. For details, see the function truth table. Selects bank to be activated during row address latch time and selects bank for precharge and read/ write during column address latch time. A11 = "L" : Bank A, A11 = "H" : Bank B
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¡ Semiconductor BLOCK DIAGRAM
MSM56V16800D/DH
CKE CLK CS RAS CAS WE DQM
Timing Register
Programming Register
Latency & Burst Controller
I/O Controller
Bank Controller
A11
A0 A11
Internal Col. Address Counter
Input Data Register
9
Input Buffers
8 8
9
Column Address Buffers
Column Decoders
Sense Amplifier Internal Row Address Counter
8
Read Data Register
8
8
Output Buffers
DQ1 DQ8
Row Decoders
Word Drivers
8Mb Memory Cells 8Mb Memory Cells
12
Row Address Buffers
12
Row Decoders
Word Drivers
Sense Amplifier
Column Decoders
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¡ Semiconductor
MSM56V16800D/DH
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Voltages referenced to VSS) Parameter Voltage on Any Pin Relative to VSS VCC Supply Voltage Storage Temperature Power Dissipation Short Circuit Current Operating Temperature Symbol VIN, VOUT VCC, VCCQ Tstg PD* IOS Topr Rating –0.5 to VCC + 0.5 –0.5 to 4.6 –55 to 150 600 50 0 to 70 Unit V V °C mW mA °C
*: Ta = 25°C Recommended Operating Conditions
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC, VCCQ VIH VIL Min. 3.0 2.0 –0.3 Typ. 3.3 — — (Voltages referenced to VSS = 0 V) Max. 3.6 VCC + 0.2 0.8 Unit V V V
Capacitance
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz) Parameter Input Capacitance (A0 - A11) Input Capacitance (CLK, CKE, CS, RAS, CAS, WE, DQM) Input/Output Capacitance (DQ1 - DQ8) Symbol CIN1 CIN2 COUT Min. 2 2 2 Max. 5 5 7 Unit pF pF pF
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¡ Semiconductor DC Characteristics
Condition Parameter Symbol Bank — — — — One Bank Active CKE — — — — Others IOH = –2 mA IOL = 2 mA — —
MSM56V16800D/DH
Output High Voltage VOH Output Low Voltage Input Leakage Current Output Leakage Current VOL ILI ILO ICC1 Average Power Supply Current (Operating)
Version D-10 D-12 DH-15 Unit Note Min. Max..