(BUZ905P / BUZ906P) P-CHANNEL POWER MOSFET
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819...
Description
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845)
BUZ905P BUZ906P
MECHANICAL DATA Dimensions in mm (inches)
P–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
3.55 (0.140) 3.81 (0.150)
4.50 (0.177) M ax.
1
2
3
1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123)
FEATURES
HIGH SPEED SWITCHING P–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE N–CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P
0.40 (0.016) 0.79 (0.031)
19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 (0.215) BSC
TO–247
Pin 1 – Gate Pin 2 – Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ905P -160V ±14V -8A -8A 125W –55 to 150°C 150°C 1.0°C/W BUZ906P -200V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage
BUZ905P BUZ906P
STATIC CHARACTERISTICS (Tcase ...
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