(BUZ905DP / BUZ906DP) P-CHANNEL POWER MOSFET
MAGNA
TEC
20.0 5.0
BUZ905DP BUZ906DP
MECHANICAL DATA Dimensions in mm
3.3 Dia.
P–CHANNEL POWER MOSFET
POWER MOSFETS...
Description
MAGNA
TEC
20.0 5.0
BUZ905DP BUZ906DP
MECHANICAL DATA Dimensions in mm
3.3 Dia.
P–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0 1.0
HIGH SPEED SWITCHING P–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING
1.2 0.6 2.8
3.4
ENHANCEMENT MODE INTEGRAL PROTECTION DIODE N–CHANNEL ALSO AVAILABLE AS BUZ900DP & BUZ901DP DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE
5.45 5.45
TO–3PBL
Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ905DP -160V BUZ906DP -200V
±14V -16A -16A 250W –55 to 150°C 150°C 0.5°C/W
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage
BUZ905DP BUZ906DP
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
VGS = 10V ID = -10mA VDS = 0 VDS = -10V VGD = 0 BUZ905DP BUZ906DP IG = ±100µA ID = -100mA ID = -16A VDS = -160V IDSX Drain – Source Cut–Off Current VGS = 10V BUZ905DP V...
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