P-CHANNEL POWER MOSFET
MAGNA
TEC
3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 )...
Description
MAGNA
TEC
3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 )
BUZ905X4S BUZ906X4S
NEW PRODUCT UNDER DEVELOPMENT
MECHANICAL DATA Dimensions in mm (inches)
P–CHANNEL POWER MOSFET
Hex Nut M 4 (4 places)
POWER MOSFETS FOR AUDIO APPLICATIONS
2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 )
1
R
2
4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 )
1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 )
FEATURES
HIGH SPEED SWITCHING
4
3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 ) (2 P lac e s)
P–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING
SOT227 Pin 1 – Drain Pin 2 – Source Pin 3 – Gate Pin 4 – Drain
ENHANCEMENT MODE INTEGRAL PROTECTION DIODE N–CHANNEL ALSO AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ905X4S –160V BUZ906X4S –200V
±14V –32A –32A 500W –55 to 150...
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