MP4412

MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne) MP4412 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 12 pins) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.17 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 5 20 2.2 4.4 28 180 5 0.22 mJ EART Tch Tstg 0.44 150 −55 to 150 °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-32C1D Weight: 3.9 g (typ.) W PDT EAS IAR W mJ A Single Pulse avalanche energy (Note 1) Avalanche current Repetitive avalanche energy (Note 2) 4-device operation Channel temperature Storage temperature range 1-device operation EAR Note 1: Condition for avalanche energy (single pulse) measurement VDD = 25 V, starting Tch = 25°C, L = 11.6 mH, RG = 25 Ω, IAR = 5 A Note 2: Repetitive rating; pulse width limited...