IRFPG40

IRFPG40 Data Sheet July 1999 File Number 2879.2 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09850. Features 4.3A, 1000V rDS(ON) = 3.500Ω UIS SOA Rating Curve (Single Pulse) -55oC to 150oC Operating and Storage Temperature Symbol D G Ordering Information PART NUMBER IRFPG40 PACKAGE TO-247 BRAND IRFPG40 S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) 4-365 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFPG40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFPG40 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...