MX28F2000T

MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES 262,144 bytes by 8-bit organization Fast access time: 90/120 ns Low power consumption – 50mA maximum active current – 100uA maximum standby current Programming and erasing voltage 12V ± 5% Command register architecture – Byte Programming (15us typical) – Auto chip erase 5 seconds typical (including preprogramming time) – Block Erase Optimized high density blocked architecture – Eight 4-KB blocks – Fourteen 16-KB blocks Auto Erase (chip & block) and Auto Program – DATA polling – Toggle bit 10,000 minimum erase/program cycles Latch-up protected to 100mA from -1 to VCC+1V Advanced CMOS Flash memory technology Compatible with JEDEC-standard byte-wide 32-pin EPROM pinouts Package type: – 32-pin plastic DIP – 32-pin PLCC GENERAL DESCRIPTION The MX28F2000T is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers. The standard MX28F2000T offers access times as fast as 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000T has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programmin...