2SK198

Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 –0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 3 1.50+0.25 –0.05 2.8+0.2 –0.3 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO ID IG PD Tch Tstg 30 −30 20 10 150 150 −55 to +150 V V mA mA mW °C °C 1: Source 2: Drain 3: Gate 0 to 0.1 Parameter Symbol Ratings Unit 1.1+0.3 –0.1 s Absolute Maximum Ratings (Ta = 25°C) (0.65) JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package Marking Symbol (Example): 1O s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS IGSS VGSC gm * Conditions VDS = 10 V, VGS = 0 VGS = −30 V, VDS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, ID = 0.5 mA, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 30 V, ID = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT min 0.5 − 0.1 4 typ max 12 −100 −1.5 Unit mA nA V mS pF pF mV 13 14 3.5 60 Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NV * IDSS rank classificatio...