2SK615

Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.4±0.2 (1.5) (1.5) R 0.9 R 0.7 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * Symbol VDS VGSO ID IDP PD * Tch Tstg Ratings 80 20 ±0.5 ±1 1 150 −55 to +150 Unit V V A A W °C °C 1 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 2 (2.5) 3 (2.5) 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on)*1 | Yfs | Coss ton *1, 2 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.1 Unit µA µA V V Ω mS pF pF pF ns ns 80 1.5 2 300 45 30 8 15 ...