Document
Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
0.75 max.
4.0±0.2 (0.8) 3.0±0.2
2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C
0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
15.6±0.5
G High-speed switching G Allowing to supply with the radial taping
(0.8)
7.6 2 3
1
1: Source 2: Drain 3: Gate NS-B1 Package
Internal Connection
D
G
S
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time
*
Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff*
Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω
min
typ
max 10 50 3.5 50
50 1.5 20 35 10 4 0.5 10 20
15 5 1
Unit µA µA V V Ω mS pF pF pF ns ns
ton, toff measurement circuit
Vout 200Ω Vin VDD = 5V Vout 10% 10% 90% ton toff 90%
50Ω
100µF
VGS = 5V
Note) The part number in the parenthesis shows conventional part number.
283
Silicon MOS FETs (Small Signal)
PD Ta
240 120
2SK0655
ID VDS
60
| Yfs | VGS
Forward transfer admittance |Yfs| (mS)
Ta=25˚C VDS=5V Ta=25˚C 50
Allowable power dissipation PD (mW)
200
100
Drain current ID (mA)
VGS=6.0V 80 5.5V 5.0V 60
160
40
120
4.5V
30
80
40
4.0V 3.5V 3.0V 2.5V 0 2 4 6 8 10 12
20
40
20
10
0 0 20 40 60 80 100 120 140 160
0
0 0 2 4 6 8 10 12
Ambient temperature Ta (˚C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
12 VGS=0 f=1MHz Ta=25˚C 120
ID VGS
Drain to source ON-resistance RDS(on) (Ω)
120 VDS=5V Ta=25˚C 100
RDS(on) VGS
ID=20mA 100
10 Ciss 8
Drain current ID (mA)
80
Ta=–25˚C 25˚C
80
6
60
75˚C
60
Ta=75˚C 25˚C –25˚C
4 Coss 2 Crss 1 3 10 30 100
40
40
20
20
0
0 0 2 4 6 8 10 12
0 0 2 4 6 8 10 12
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
VIN IO
100 30 VO=5V Ta=25˚C
Input voltage VIN (V)
10 3 1 0.3 0.1 0.03 0.01 0.1
0.3
1
3
10
30
100
Output current IO (mA)
284
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