2SK656

Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 1 15.6±0.5 G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage 2 3 (0.8) 0.75 max. 7.6 1: Source 2: Drain 3: Gate NS-B1 Package Internal Connection D R1 G R2 S I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + R2*1 Coss ton*2 toff *2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200Ω VDD = 5V, VGS = 5V, RL = 200Ω min typ max 10 Unit µA µA V V Ω mS V 40 50 1.5 80 3.5 50 20 4.5 35 1 100 9 200 V kΩ pF pF pF µs µs Input capacitance (Common Source) Ciss Output capacitance (Common Source) VD...